Semiconductor Science and Technology

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From: "James O'Donnell" <jod@ccat.sas.upenn.edu>
Subject: Semiconductor Science and Technology
Date: Mon, 12 Feb 1996 01:02:20 -0500 (EST)


Semiconductor Science and Technology

This journal is published by the Institute of Physics (IOP) in the U.K.         
One can get a print journal or a WWW version via a subscription to the
publisher.  All contact information can be found at                       
                                                                          
http://www.iop.org/Journals/Catalogue/index.html                          

Experimental and theoretical studies of the structural, electrical,
optical and acoustic properties and the doping of bulk, low-dimensional
and amorphous semiconductors; computational semiconductor physics;
interface properties, including the physics and chemistry of
heterojunctions, metal - semiconductor and insulator - semiconductor
junctions; all multi-layered structures involving semiconductor
components. 

Physics of semiconductor devices, including theoretical modelling and
experimental demonstration; all aspects of the technology of
semiconductor device and circuit fabrication; growth and preparation of
materials, including both epitaxial (e.g.  molecular beam and chemical
vapour methods) and bulk techniques; the structural, electrical and
optical characterization of material and device structures. 

Also included are appropriate aspects of surface science; the influence
of growth kinetics and chemical processing on layer and device
properties; growth models; relevant areas of `molecular electronics' and
semiconductor structures incorporating Langmuir - Blodgett films;
resists, lithography and metallization where they are concerned with the
definition of small geometry structure. 

The Materials and Device Reliability section particularly welcomes
papers treating: reliability evaluation of technologies; failure
analysis and advanced analysis techniques; SEM, E-beam, optical emission
microscopy, acoustic microscopy techniques; liquid crystal techniques;
noise measurement; modelling and simulation of device properties;
reliability prediction and simulation; reliability indicators; failure
mechanisms, including charge migration, trapping, oxide breakdown, hot
carrier effects, electromigration, stress migration; package-related
failure mechanisms; effects of operational and environmental stresses on
reliability. 

Frequency Monthly, 12 issues per volume 

UK Prices 
Institution L713.00 
Individual 
Single issue L59.40 
Microfiche L535.00 
                      
US Prices 
Institution $1469.00 
Individual 
Single issue $122.40 
Microfiche $1101.00 
                                           
ROW Prices 
Institution L713.00 
Individual 
Single issue L59.40 
Microfiche L535.00